? semiconductor components industries, llc, 2012 october, 2012 ? rev. 5 1 publication order number: NTA7002N/d NTA7002N, nvta7002n small signal mosfet 30 v, 154 ma, single, n ? channel, gate esd protection, sc ? 75 features ? low gate charge for fast switching ? small 1.6 x 1.6 mm footprint ? esd protected gate ? nv prefix for automotive and other applications requiring unique site and control change requirements; aec ? q101 qualified and ppap capable ? these devices are pb ? free and are rohs compliant applications ? power management load switch ? level shift ? portable applications such as cell phones, media players, digital cameras, pda?s, video games, hand ? held computers, etc. maximum ratings (t j = 25 c unless otherwise noted) parameter symbol value unit drain ? to ? source voltage v dss 30 v gate ? to ? source voltage v gs 10 v continuous drain current (note 1) steady state = 25 c i d 154 ma power dissipation (note 1) steady state = 25 c p d 300 mw pulsed drain current t p 10 s i dm 618 ma operating junction and storage temperature t j , t stg ? 55 to 150 c continuous source current (body diode) i sd 154 ma lead temperature for soldering purposes (1/8 from case for 10 s) t l 260 c stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. thermal resistance ratings parameter symbol max unit junction ? to ? ambient ? steady state (note 1) r ja 416 c/w 1. surface ? mounted on fr4 board using 1 in sq pad size (cu area = 1.127 in sq [1 oz] including traces). 2.3 @ 2.5 v (top view) sc ? 75 / sot ? 416 case 463 style 5 2 1 sc ? 75 (3 ? leads) drain gate 3 1 2 source 3 r ds(on) typ @ v gs i d max (note 1) v (br)dss 1.4 @ 4.5 v 30 v 154 ma 1 3 2 n ? channel marking diagram t6 = specific device code m = date code = pb ? free package (note: microdot may be in either location) t6 m 1 3 2 pin connections http://onsemi.com see detailed ordering and shipping information in the package dimensions section on page 4 of this data sheet. ordering information
NTA7002N, nvta7002n http://onsemi.com 2 electrical characteristics (t j = 25 c unless otherwise specified) parameter symbol test condition min typ max unit off characteristics drain ? to ? source breakdown voltage v (br)dss v gs = 0 v, i d = 100 a 30 v zero gate voltage drain current i dss v gs = 0 v, v ds = 30 v 1.0 a zero gate voltage drain current i dss v gs = 0 v, v ds = 20 v, t = 85 c 1.0 a gate ? to ? source leakage current i gss v ds = 0 v, v gs = 10 v 25 a gate ? to ? source leakage current i gss v ds = 0 v, v gs = 5 v 1.0 a gate ? to ? source leakage current i gss v ds = 0 v, v gs = 5 v t = 85 c 1.0 a on characteristics (note 2) gate threshold voltage v gs(th) v ds = v gs , i d = 100 a 0.5 1.0 1.5 v drain ? to ? source on resistance r ds(on) v gs = 4.5 v, i d = 154 ma 1.4 7.0 v gs = 2.5 v, i d = 154 ma 2.3 7.5 forward transconductance g fs v ds = 3 v, i d = 154 ma 80 ms capacitances input capacitance c iss v ds = 5.0 v, f = 1 mhz, v gs = 0 v 11.5 20 pf output capacitance c oss 10 15 reverse transfer capacitance c rss 3.5 6.0 switching characteristics (note 3) turn ? on delay time t d(on) v gs = 4.5 v, v ds = 5.0 v, i d = 75 ma, r g = 10 13 ns rise time t r 15 ns turn ? off delay time t d(off) 98 fall time t f 60 drain ? source diode characteristics forward diode voltage v sd v gs = 0 v, i s = 154 ma 0.77 0.9 v 2. pulse test: pulse width 300 s, duty cycle 2%. 3. switching characteristics are independent of operating junction temperatures.
NTA7002N, nvta7002n http://onsemi.com 3 typical performance curves t j = 125 c 0 0.16 1.6 0.4 v ds , drain ? to ? source voltage (volts) i d, drain current (amps) 0.12 0.04 0 figure 1. on ? region characteristics 0.6 1.4 2 figure 2. transfer characteristics v gs , gate ? to ? source voltage (volts) 1 2 0.5 figure 3. on ? resistance vs. drain current and temperature i d, drain current (amps) r ds(on), drain ? to ? source resistance ( ) i d, drain current (amps) figure 4. on ? resistance vs. drain current and gate voltage ? 50 0 ? 25 25 1 0.2 0 50 150 figure 5. on ? resistance variation with temperature t j , junction temperature ( c) t j = 25 c 0.05 t j = ? 55 c t j = 125 c 75 t j = 25 c i d = 0.15 a v gs = 4.5 v r ds(on), drain ? to ? source resistance (normalized) t j = 25 c r ds(on), drain ? to ? source resistance ( ) 1.2 v gs = 2.5 v 0 0.15 1 25 figure 6. drain ? to ? source leakage current vs. voltage v ds , drain ? to ? source voltage (volts) 15 v gs = 0 v i dss , leakage (na) t j = 150 c t j = 125 c v gs = 4.5 v 10 100 2 v v ds = 5 v 20 1.4 v 0.08 1.2 v 0.1 30 0.2 0.18 v gs = 10 v 2.5 125 100 0 2.0 10 5 1.2 0.8 1.2 1.5 0.2 v gs = 4.5 v t j = 25 c t j = ? 55 c i d, drain current (amps) 2 1000 5 v 2.4 v 1.8 1 1 2 0.5 0.05 0 0.15 0.1 2.5 1.5 0.2 0.4 1.4 0.6 1.6 0.8 1.8 0.14 0.1 0.02 0.06 2.8 v 0.16 0.12 0.04 0 0.08 0.2 0.8 1.6
NTA7002N, nvta7002n http://onsemi.com 4 typical performance curves figure 7. capacitance variation 0.02 0 v sd , source ? to ? drain voltage (volts) figure 8. resistive switching time variation vs. gate resistance i s , source current (amps) v gs = 0 v t j = 25 c 0.16 0.5 0.65 figure 9. diode forward voltage vs. current 0.8 0.6 0.08 0.06 gate ? to ? source or drain ? to ? source voltage (volts) c, capacitance (pf) 5 10 0 5 10 5 t j = 25 c c iss c oss c rss 15 0 20 c iss c rss v ds = 0 v v gs = 0 v v ds v gs r g , gate resistance (ohms) 1 10 100 100 10 t, time (ns) v dd = 5.0 v i d = 75 ma v gs = 4.5 v t r t d(on) 1000 t f t d(off) 1 0.04 25 0.7 0.55 10 15 0.14 20 0.12 0.1 0.75 ordering information device package shipping ? NTA7002Nt1g sc ? 75 (pb ? free) 3000 / tape & reel nvta7002nt1g sc ? 75 (pb ? free) 3000 / tape & reel ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specifications brochure, brd8011/d.
NTA7002N, nvta7002n http://onsemi.com 5 package dimensions sc ? 75 / sot ? 416 case 463 issue f style 5: pin 1. gate 2. source 3. drain soldering footprint* *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: millimeter. m 0.20 (0.008) d ? e ? ? d ? b e 3 pl 0.20 (0.008) e c l a a1 3 2 1 h e dim min nom max millimeters a 0.70 0.80 0.90 a1 0.00 0.05 0.10 b c 0.10 0.15 0.25 d 1.55 1.60 1.65 e e 1.00 bsc 0.027 0.031 0.035 0.000 0.002 0.004 0.004 0.006 0.010 0.059 0.063 0.067 0.04 bsc min nom max inches 0.15 0.20 0.30 0.006 0.008 0.012 h e l 0.10 0.15 0.20 1.50 1.60 1.70 0.004 0.006 0.008 0.061 0.063 0.065 0.70 0.80 0.90 0.027 0.031 0.035 0.787 0.031 0.508 0.020 1.000 0.039 mm inches scale 10:1 0.356 0.014 1.803 0.071 on semiconductor and are registered trademarks of semiconductor co mponents industries, llc (scillc). scillc owns the rights to a numb er of patents, trademarks, copyrights, trade secrets, and other intellectual property. a list ing of scillc?s product/patent coverage may be accessed at ww w.onsemi.com/site/pdf/patent ? marking.pdf. scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and s pecifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. all operating parame ters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the right s of others. scillc products are not designed, intended, or a uthorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in whic h the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchase or us e scillc products for any such unintended or unauthorized appli cation, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unin tended or unauthorized use, even if such claim alleges that scil lc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyrig ht laws and is not for resale in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5817 ? 1050 NTA7002N/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative
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